Technical Notes:
1. ALD low te mperature precursor for the silicon oxide and silicon nitride thin film de position
References:
1. Solid State Technol., 2000, 43, 79.
2.J Electrochem. Soc. 2005 152 G316
3.Thin Solid Films, 2014. 558 93
4.J. Phys. Chem. c.2016 120 10927
5.Acs Appl. Mater. Interfaces 2017 9, 42928 Appl Phys Lett. 2015 10Z. 014102
6.Chem. Mater. 2016 28 5864
7.Acs Appl Mater. Interfaces 2017 9 1858
Strem