半岛bd体育手机客户端 说明

一般描述

Atomic number of base material: 40 Zirconium

应用

Advanced precursor for atomic layer deposition of ZrO₂thin films. Hafnium and zirconium oxides are leading candidates to replace silicion dioxide as the gate oxide in a variety of semiconductor and energy applications. Excellent properties of HfO₂and ZrO₂films make them especially attractive for gate oxide replacement and as potential insulating dielectrics for capacitive elements in memory devices such as DRAM.
Precursors Packaged for Depositions Systems

包装

10 g in stainless steel cylinder
Packaged in stainless steel cylinders compatible with conventional deposition systems. Precursors may be used in liquid injection systems as dilute solutions and in combination with a variety of other sources to deposit mixed oxides.

特点和优势

Compatible with a variety of oxidants in ALD growth processes across a wide temperature range exhibiting self limiting growth up to 400 ℃. Precursor volatility and thermal stability properties enable easy materials transport from bubblers into conventional deposition tools.

基本信息

半岛bd体育手机客户端 性质

安全信息

象形图
警示用语：	Warning
危险声明	H302 - H315 - H319
预防措施声明	P305 + P351 + P338
危险分类	Acute Tox. 4 Oral - Eye Irrit. 2 - Skin Irrit. 2
储存分类代码	10 - Combustible liquids not in Storage Class 3
WGK	WGK 3
闪点(F)	226.4 °F
闪点(C)	108 ℃